Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Abstract

This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..